MRF7S18170HR3 MRF7S18170HSR3
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF7S18170H and MRF7S18170HS parts will be available for 2 years after release of
MRF7S18170H and MRF7S18170HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF7S18170H
and MRF7S18170HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2006
?
Initial Release of Data Sheet
1
Dec. 2008
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
?
Updated Typical Performance table to provide better
definition of characterization attributes, p. 3
?
Corrected Z7 from 1.110″
to 0.120″
in Z list, Fig. 1, Test Circuit Schematic ? NI--880, p. 4
?
Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant
part numbers, p. 4, 6
?
Corrected Z7 from 1.110″
to 0.117″
in Z list, Fig. 3, Test Circuit Schematic ? NI--880S, p. 6
?
Adjusted scale for Fig. 10, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 9
?
Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 10
?
Updated Fig. 16, CCDF W--CDMA 3GPP, Test Model 1,
64 PDCH, 50% Clipping, Single--Carrier Test
Signal, to show input signal only, p. 10
2
Mar. 2011
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
?
Fig. 15, MTTF versus Junction Temperature removed, p. 10. Refer to the device?s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
?
Fig. 16, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 17, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 10 (renumbered as Figs. 15 and
16 respectively after Fig. 15 removed)
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF7S19080HSR5
MOSFET RF N-CH NI-780S
MRF7S19100NR1
MOSFET RF N-CH 28V 29W TO270-4
MRF7S19120NR1
MOSFET RF N-CH TO-270-4
MRF7S19170HSR5
IC MOSFET RF N-CHAN NI-880S
MRF7S19210HSR5
MOSFET RF N-CH 28V 63W NI780S
MRF7S21080HSR5
MOSFET RF N-CH 22W NI-780S
MRF7S21110HSR5
MOSFET RF N-CH 33W NI-780S
MRF7S21150HSR5
MOSFET RF N-CH 150W NI780S
相关代理商/技术参数
MRF7S19080HR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19080HR5
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19080HS
制造商:Freescale Semiconductor 功能描述:
MRF7S19080HSR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19080HSR5
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19100NBR1
功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19100NR1
功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19100NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs